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| SMD Type HEXFET Power MOSFET KRLML6402 MOSFET Features Ultra low on-resistance. P-Channel MOSFET. +0.1 2.4-0.1 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm SOT-23 Footprint. Low profile(1.1mm). Available in tape and reel. Fast switching. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 1. Gate +0.1 0.38-0.1 0-0.1 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-to-source voltage Continuous drain curent,VGS@-4.5V , TA=25 Continuous drain curent,VGS@-4.5V , TA=70 Pulsed drain current *1 Power dissipation Power dissipation Linear derating factor Single Pulse Avalanche Energy *2 Maximum Junction-to-Ambient *3 Junction and storage temperature range EAS RJA TJ,TSTG @TA=25 @TA=70 IDM PD Symbol VDS VGS ID Rating -20 12 -3.7 -2.2 -22 1.3 0.8 0.01 11 100 -55 to +150 mW/ MJ /W A W Unit V V A *1Reptitive rating:pulse width limited by max.junction temperature. *2. StartingTJ=25,L=1.65mH ,RG=25,IAS=-3.7A. *3.Surface mounted on 1''square single layer 1oz.copper FR4 board,steady state. www.kexin.com.cn 1 SMD Type HEXFET Power MOSFET KRLML6402 MOSFET Electrical Characteristics Ta = 25 Parameter Drain-source Breakdown voltage Gate-source leakage current Gate-source leadage Gate threshold voltage Static drain-source on- resistance Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on delay time Rise time Turn-off delay time Fall time Reverse recovery time Reverse recovery charge Continuous source current Pulsed source current *1 Diode forward voltage Symbol VDSS IDSS IGSS VGS(th) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr Qrr IS ISM VSD ID= -3.7 A, VDD= -10 V, RD= 2.7 RG= 89 TJ=25, IF = -1.0 A, di / dt = -100 A/s *2 MOSFET symbo l showing the integral reverse p-n junction diode D Test conditions Min -20 Typ Max Unit V ID= -250 A, VGS = 0V VDS = -20 V, VGS = 0V VDS = -20 V, VGS = 0V, TJ=70 VGS =12V VDS = VGS, ID= -250 A ID= -3.7A, VGS = -4.5V ID= -3.1A, VGS = -2.5V VDS = -10 V, ID = -3.7 A VDS = -10 V, VGS = 0 V, f= 1MHz -1.0 -25 100 -0.40 -0.55 0.050 -0.95 0.065 A nA V S 0.080 0.0135 6.0 633 145 110 8.0 12 1.8 4.2 nC pF VDS = -10V ,VGS = -5.0 V , ID= -3.7 A 1.2 2.8 350 48 588 381 29 11 ns 43 17 -1.3 ns nC G A -22 S TJ=25,VGS = 0 V, IS = -1.0 A *2 -1.2 V *1 Repetitive rating;pulse width limited by max.junction temperature. * 2 Pulse width 300s, Duty cycle 2% www.kexin.com.cn 2 |
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